近期，杜祖亮课题组利用溶剂热法制备出NiO纳米晶，并将之作为空穴注入层构筑高性能红光QLED。这些结果对提高QD-LEDs器件的使用寿命具有重要意义。该研究成果发表在Organic Electronics（2017, 44, 189-197，SCI二区,  IF=3.471）上。

http://www.sciencedirect.com/science/article/pii/S156611991730085X

Highly bright orange-red QLED with peak luminance up to ~25580 cd m^-2, and current efficiency (CE) of 5.38 cd A^-1are achieved successfully based on the high performance NiO HIL, further, the device obtained relative long operational lifetime of 11491 h, which has been improved by more than 6- fold as compared to 1839 h for the device based on PEDOT.

基于NiO纳米晶作为空穴注入层的红光QLED的亮度与电流效率分别可达25580 cd m^-2和 5.38 cd A^-1，最为关键的是，器件的使用寿命可达到11491 h，是以传统的PEDOT作为空穴注入层QLED器件寿命的6倍。