Prof. Huaibin Shen’s research team published the article titled “Over 30% External Quantum Efficiency Light-Emitting Diodes by Engineering Quantum Dot-Assisted Energy Level Match for Hole Transport Layer” in top journal of Adv. Funct. Mater..

The dedicated design and synthesis of high luminescence Zn1−xCdxSe/ZnSe/ZnS QDs by precisely controlled shell growth, which have matched energy level with the adjacent hole transport layer in QLEDs. As emitters, such Zn1−xCdxSe- based QLEDs exhibit peak EQE of up to 30.9%, maximum brightness of over 334 000 cd m−2, very low efficiency roll-off at high current density (EQE ≈25% @ current density of 150 mA cm−2), and operational lifetime extended to 1 800 000 h at 100 cd m−2. These extraordinary performances make this work the best among all solution-processed QLEDs reported in literature so far by achieving simultaneously high luminescence and balanced charge injection. These major advances are attributed to the combination of an intermediate ZnSe layer with an ultrathin ZnS outer layer as the shell materials and surface modification with 2-ethylhexane-1-thiol, which can dramatically improve hole injection efficiency and thus lead to more balanced charge injection.

Article link: https://onlinelibrary.wiley.com/doi/10.1002/adfm.201808377

This work used as the cover is published in Adv. Funct. Mater.. Its latest influence factor is 15.621. Jiaojiao Song and Ouyang Wang are the coauthors for this paper, and Prof. Huaibin Shen and Lin Song Li are the corresponding authors.