Recently, Professor Cheng Gang’s group has made new progress in the plasma regulation of the Fermi level of monolayer graphene based on triboelectric nanogenerator (TENG). The relevant result is titled "The Triboelectric Microplasma Transistor of Monolayer Graphene with a Reversible Oxygen Ion Floating Gate", which was published in the famous international journal Nano Energy (IF=16.602, JCR District 1).

Article link: https://doi.org/10.1016/j.nanoen.2020.105229

Due to the excellent property, single-layer graphene is widely used in many fields such as flexible electronic devices, sensitive sensors, and supercapacitors. Adjusting the Fermi level of graphene with the floating gate voltage generated by surface adsorbents is an important strategy for the development of novel field effect transistors. However, a large number of previous studies show O2 cannot form an effective chemical adsorption on the surface of a single-layer graphene, resulting little effect on the electrical and magnetic properties of graphene. As an electron acceptor, The lowest unoccupied molecular orbital (LUMO) of O2 is higher than the Fermi level of graphene, which cannot directly obtain electrons from the valence band of graphene to form O2- ions.

In this article, we achieve rapid chemical adsorption of O2 on the graphene surface by changing the adsorption path of O2 molecules based on the gas ion gate technology powered by triboelectrinc nanogenerator. Graphene transistors with a reversible floating ion gate are reported.

In specific experiments, O2 molecules were first activated to O2- by triboelectric plasma technology, and then O2- was adsorbed on graphene. As a negative floating gate, O2- can move the Fermi level downward and produce p-type doped graphene. The floating gate effect of O2- can be eliminated by heating, and the analytical potential barrier of O2- can be obtained by fitting experimental data. The first-principles calculations show that the LUMO energy level of O2- is reduced to 0.85 eV below the Fermi level of graphene, thus overcoming the initial adsorption barrier. The O2 floating gate technology based on single-layer graphene proposed in this paper can be carried out in the atmosphere without expensive equipment, which has potential applications in the development of new graphene-based electronic and optoelectronic devices.

Recently, Professor Cheng Gang’s group has made new progress in the plasma regulation of the Fermi level of monolayer graphene based on triboelectric nanogenerator (TENG). The relevant result is titled "The Triboelectric Microplasma Transistor of Monolayer Graphene with a Reversible Oxygen Ion Floating Gate", which was published in the famous international journal Nano Energy (IF=16.602, JCR District 1).

Article link: https://doi.org/10.1016/j.nanoen.2020.105229

Due to the excellent property, single-layer graphene is widely used in many fields such as flexible electronic devices, sensitive sensors, and supercapacitors. Adjusting the Fermi level of graphene with the floating gate voltage generated by surface adsorbents is an important strategy for the development of novel field effect transistors. However, a large number of previous studies show O2 cannot form an effective chemical adsorption on the surface of a single-layer graphene, resulting little effect on the electrical and magnetic properties of graphene. As an electron acceptor, The lowest unoccupied molecular orbital (LUMO) of O2 is higher than the Fermi level of graphene, which cannot directly obtain electrons from the valence band of graphene to form O2- ions.

In this article, we achieve rapid chemical adsorption of O2 on the graphene surface by changing the adsorption path of O2 molecules based on the gas ion gate technology powered by triboelectrinc nanogenerator. Graphene transistors with a reversible floating ion gate are reported.

In specific experiments, O2 molecules were first activated to O2- by triboelectric plasma technology, and then O2- was adsorbed on graphene. As a negative floating gate, O2- can move the Fermi level downward and produce p-type doped graphene. The floating gate effect of O2- can be eliminated by heating, and the analytical potential barrier of O2- can be obtained by fitting experimental data. The first-principles calculations show that the LUMO energy level of O2- is reduced to 0.85 eV below the Fermi level of graphene, thus overcoming the initial adsorption barrier. The O2 floating gate technology based on single-layer graphene proposed in this paper can be carried out in the atmosphere without expensive equipment, which has potential applications in the development of new graphene-based electronic and optoelectronic devices.